P1610AT Datasheet - UNIKC

P1610AT N-Channel MOSFET

P1610AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110V 16mΩ @VGS = 10V 51A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C ID 51 TC = 100 °C 32 IDM 150 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Operating Junction & Storage.

P1610AT Datasheet (701.38 KB)