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P1615ATA Datasheet - UNIKC

P1615ATA N-Channel MOSFET

P1615ATA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 16.5mΩ @VGS = 10V 68A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 68 43 IDM 270 Avalanche Current IAS 30 Avalanche Energy L = 1mH EAS 435 Power Dissipation TC = 25 °C TC = 100 °C PD 192 .

P1615ATA Datasheet (740.30 KB)