P2003NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 20mΩ @VGS =10V -30V 25mΩ @VGS = -10V ID 8.8A -8A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N 8.8 P -8 ID N 7 P -6.4 Pulsed Drain Current1 N 35 IDM P -32 Avalanche Current N 27 IAS P -28 Avalanche.