P2004EV Datasheet - UNIKC

P2004EV P-Channel MOSFET

P2004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 20mΩ @VGS = -10V ID -8.7A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -8.7 -7 -45 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS -45 103 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6.

P2004EV Datasheet (343.46 KB)