P2806AT - N-Channel MOSFET
P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 30mΩ @VGS = 10V ID 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 34 21 110 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 41 Power Dissipation TC = 25 °C TC = 100 °C PD 58 23 Operating Junction & Storage Temperatu
