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P2806BV Datasheet - UNIKC

P2806BV N-Channel MOSFET

P2806BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V ID 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 7 5 35 Avalanche Current IAS 28 Avalanche Energy L =0.1mH EAS 41 Power Dissipation TA= 25 °C TA =70 °C PD 2.5 1.6 Junction & Stora.

P2806BV Datasheet (454.60 KB)