P2806ATF Datasheet - UNIKC

P2806ATF N-Channel MOSFET

P2806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30mΩ @VGS = 10V 27A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID 27 TC = 100 °C 17 IDM 105 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 41 Power Dissipation TC = 25 °C PD 40 TC = 100 °C 16 Operating Junction & Stora.

P2806ATF Datasheet (357.24 KB)