P2806BD Datasheet - UNIKC

P2806BD N-Channel MOSFET

P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ @VGS = 10V ID 30A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 30 19 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH EAS 43 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operating Junction & Storage Temperatu.

P2806BD Datasheet (631.14 KB)