PA010HK - MOSFET
PA010HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 100mΩ @VGS = 10V ID 9.1A PDFN 5 6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C 9.1 ID 5.7 IDM 25 Continuous Drain Current TA = 25 °C TA = 70 °C 3 ID 2.4 Avalanche Current IAS 6 Avalanche Energy L = 1mH
