PA110BC - N-Channel MOSFET
PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 4 3.5 15 Avalanche Current IAS 4.8 Avalanche Energy L = 0.1mH EAS 11.5 Power Dissipation3 TA = 25 °C TA = 100 °C PD 3.9 2.5 Operating Junction & Storage Te
