PA110BD Datasheet - UNIKC

PA110BD N-Channel Transistor

PA110BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 15 10 60 Avalanche Current IAS 24 Avalanche Energy L = 0.1mH EAS 30 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Opera.

PA110BD Datasheet (387.57 KB)