PA110BL - MOSFET
PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 6 Continuous Drain Current TA = 25 °C ID 3.2 Pulsed Drain Current1 TA = 100 °C IDM 2 15 Avalanche Current IAS 6.6 Avalanche Energy L = 0.1mH EAS 2.2 Power Dissipation TA = 25 °C TA = 100 °C PD 2.5 1 Operating Junc
