PA110BV - N-Channel MOSFET
PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3.2 2.5 10 Avalanche Current IAS 25 Avalanche Energy L =0.1mH EAS 31 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Junc
