PA102FDG Datasheet - UNIKC

PA102FDG P-Channel MOSFET

PA102FDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 115mΩ @VGS = -4.5V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -10 -6.2 -24 Power Dissipation TC = 25 °C TC = 100 °C PD 25 9.6 Operating Junction & Storage Temperature Range TJ, TSTG -55.

PA102FDG Datasheet (518.30 KB)