PD612BA Datasheet - UNIKC

PD612BA N-Channel MOSFET

PD612BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 47A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 47 30 120 Avalanche Current IAS 22 Avalanche Energy L=0.1mH EAS 24 Power Dissipation TC= 25 °C TC= 100°C PD 34 13 Junction & Stor.

PD612BA Datasheet (445.57 KB)