PD616BA Datasheet - UNIKC

PD616BA N-Channel MOSFET

PD616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V ID 55A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 55 35 120 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 27 Power Dissipation TC = 25 °C TC = 100 °C PD 38 15 Junction.

PD616BA Datasheet (720.12 KB)