PD618BA Datasheet - UNIKC

PD618BA N-Channel MOSFET

PD618BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.5mΩ @VGS = 10V ID 74A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 74 46 150 Avalanche Current IAS 31 Avalanche Energy L = 0.1mH EAS 48 Power Dissipation TC = 25 °C TC = 100 °C PD 54 21 Juncti.

PD618BA-UNIKC.pdf