PD632BA Datasheet - UNIKC

PD632BA N-Channel MOSFET

PD632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V ID 105A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 105 66 200 Avalanche Current IAS 40 Avalanche Energy L=0.1mH EAS 80 Power Dissipation TC= 25 °C TC= 100°C PD 73 29 Junction & .

PD632BA Datasheet (680.26 KB)