PD636BA Datasheet - UNIKC

PD636BA N-Channel MOSFET

PD636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 48A TO-252 100% RG Test 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 48 30.5 120 Avalanche Current IAS 20 Avalanche Energy L=0.1mH EAS 20.8 Power Dissipation TC= 25 °C TC= 100.

PD636BA Datasheet (450.53 KB)