PD6A6BA Datasheet - UNIKC

PD6A6BA N-Channel MOSFET

PD6A6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8mΩ @VGS = 10V ID 60A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 60 38 110 Avalanche Current IAS 30.5 Avalanche Energy L = 0.1mH EAS 46.7 Power Dissipation TC = 25 °C TC = 100 °C PD 62 25 Junc.

PD6A6BA Datasheet (767.28 KB)