PD6A8BA Datasheet - UNIKC

PD6A8BA N-Channel MOSFET

PD6A8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 6.2mΩ @VGS = 10V ID 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 47 120 Avalanche Current IAS 35 Avalanche Energy L =0.1mH EAS 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 73 29 Junct.

PD6A8BA Datasheet (489.47 KB)