PD6B2BA Datasheet - UNIKC

PD6B2BA N-Channel MOSFET

PD6B2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.2mΩ @VGS = 10V ID 63A TO-252 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 63 40 120 Avalanche Current IAS 25 Avalanche Energy L = 0.1mH EAS 31 Power Dissipation TC = 25 °.

PD6B2BA Datasheet (773.94 KB)