PD6F8BA Datasheet - UNIKC

PD6F8BA N-Channel MOSFET

PD6F8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 3.3mΩ @VGS = 10V ID 117A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 117 74 200 Avalanche Current IAS 75 Avalanche Energy L = 0.1mH EAS 281 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Jun.

PD6F8BA Datasheet (766.33 KB)