PE618BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 40A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 40 25 100 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 10 Avalanche Current IAS 30 Avalanche Energy L =0.1mH EAS 46 .
