PE618DT Datasheet - UNIKC

PE618DT MOSFET

PE618DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 7mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 39A 23A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 39 25 50 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 10 Avalanche Current IAS 23 Avalan.

PE618DT Datasheet (1.07 MB)