PZ509BA - P-Channel Enhancement Mode MOSFET
PZ509BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 135mΩ @VGS = -10V ID -1.2A SOT-323 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID -1.2 TA = 70 °C -0.9 IDM -5.2 Power Dissipation TA = 25 °C PD 0.3 TA = 70 °C 0.2 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C
