PZ558EZ Datasheet (UNIKC) - Dual N-Channel Enhancement Mode MOSFET

PZ558EZ, Dual N-Channel Enhancement Mode MOSFET

PZ558EZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3Ω @VGS = 4V ID 0.2A SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±16 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C ID TA = 70 °C IDM 0.24 0.17 0.7 Power Dissipation TA = 25 °C PD TA = 70 °C 0.29 0.19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A A W °C