* High safe operating area(100 tested) 150W and 100V
* Complement Characterized for linear operation
* High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A)
* For Low Distortion Complementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless oth
2N3773
UTC
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Complementary silicon transistors.
UTC 2N3773/2N6099
COMPLEMENTARY SILICON TRANSISTORS
The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positi.
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