UTG6N60-S Datasheet - UTC

UTG6N60-S 600V TRENCH GATE FIELD-STOP IGBT

The UTC UTG6N60-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG6N60-S is suitable for the resonant or soft switching applications. * FEAT.

UTG6N60-S Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=6.0A, VGE=15V (TC =25°C)

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG6N60L-TN3-R UTG6N60G-TN3-R TO-252 Note: Pin Assignment: G: Gate

UTG6N60-S-UTC.pdf