UTG6N60-S - 600V TRENCH GATE FIELD-STOP IGBT
The UTC UTG6N60-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.
it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG6N60-S is suitable for the resonant or soft switching applications.
* FEAT
UTG6N60-S Features
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=6.0A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG6N60L-TN3-R UTG6N60G-TN3-R TO-252 Note: Pin Assignment: G: Gate
