UTG80N65-S Datasheet (UTC) - 650V TRENCH GATE FIELD-STOP IGBT

UTG80N65-S, 650V TRENCH GATE FIELD-STOP IGBT

The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG80N65-S is suitable for the resonant or soft switching applications.

* FE

UTG80N65-S Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.= 1.65V @ IC=80A, VGE=15V (TC =25°C)

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG80N65L-T47-T UTG80N65G-T47-T Note: Pin Assignment: G: Gate C: Collector