UTG80N65-S Datasheet, Field-stop Igbt, UTC

650v trench gate field-stop igbt

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UTG80N65-S

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UTC

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716.13 KB

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Description:

650v trench gate field-stop igbt.
The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.
it uses UTC’s advanced technology to provi.

✔ UTG80N65-S Features

High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.= 1.65V @ IC=80A, VGE=15V (TC =25°C)
SYMBOL
ORDERING INFORMATION Ordering

✔ UTG80N65-S Application

FEATURES
High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.= 1.65

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UTG80N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC