UTG80N65ND-S 650V TRENCH GATE FIELD-STOP IGBT

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UTG80N65ND-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG80N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

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Datasheet Specifications

Part number: UTG80N65ND-S
Manufacturer: UTC
File Size: 173.57 KB
Datasheet: UTG80N65ND-S-UTC.pdf
Description: 650V TRENCH GATE FIELD-STOP IGBT

Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. = 1.6V @ IC=80A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG80N65NDL-T47-T UTG80N65NDG-T47-T TO-247 Note: Pin Assignment: G

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UTG80N65ND-S 650V TRENCH GATE FIELD-STOP IGBT UTC

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