UTG80N65ND-S Datasheet, Igbt, UTC

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UTG80N65ND-S

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UTC

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📄 Datasheet

Description:

650v trench gate field-stop igbt. The UTC UTG80N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customer

✔ UTG80N65ND-S Features

High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.= 1.6V @ IC=80A, VGE=15V (TC =25°C)
SYMBOL
ORDERING INFORMATION Ordering N

✔ UTG80N65ND-S Application

FEATURES
High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.= 1.6V

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TAGS

UTG80N65ND-S 650V TRENCH GATE FIELD-STOP IGBT UTC