CHA1010-99F Datasheet - United Monolithic Semiconductors

CHA1010-99F - 7-11GHz Low Noise Amplifier

The CHA1010-99F is a monolithic threestage wide-band low noise amplifier. It is designed for a wide range of applications, from military to commercial IN communication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate litho.

CHA1010-99F Features

* Broadband performance: 7-11GHz

* 1dB Noise Figure

* 32dB Linear Gain

* +5.5dBm Pout at 1dB gain compression

* DC bias: Vd=5Volt, Id=30mA

* Chip size 2.57x1.79x0.1mm -40°C, +25°C, +85°C Main Electrical Characteristics Tamb= +25°C. Vd = +5.0V Symbol Parameter Freq Frequ

CHA1010-99F-UnitedMonolithicSemiconductors.pdf