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CHA2063A - 7-13GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA2063a is a two-stage wide band monolithic low noise amplifier.

The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form or in an hermetic leadless ceramic package.

Features

  • Broad band performance 7-13GHz.
  • 2.0dB noise figure, 8-13GHz.
  • 19dB gain.
  • Low DC power consumption, 40mA.
  • 18dBm 3rd order intercept point.
  • Chip size : 1,52 x 1,27 x 0.1mm Pin Out 1 - NC 2 - NC 3 - RF output 4 - NC 5 - Vdd 6 - RF input Main Characteristics Tamb = +25°C, package form Symbol NF G ∆G Parameter Noise figure, 7-8GHz Noise figure, 8-13GHz Gain Gain flatness 16 Min Typ 2.5 2.0 19 ± 2.0 Max 3.0 2.5 Unit dB dB dB ESD Protections : Electrostatic discharge se.

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Datasheet Details

Part number CHA2063A
Manufacturer United Monolithic Semiconductors
File Size 135.47 KB
Description 7-13GHz Low Noise Amplifier
Datasheet download datasheet CHA2063A Datasheet
Additional preview pages of the CHA2063A datasheet.

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Full PDF Text Transcription

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CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form or in an hermetic leadless ceramic package. Main Features ■ Broad band performance 7-13GHz ■ 2.0dB noise figure, 8-13GHz ■ 19dB gain ■ Low DC power consumption, 40mA ■ 18dBm 3rd order intercept point ■ Chip size : 1,52 x 1,27 x 0.1mm Pin Out 1 - NC 2 - NC 3 - RF output 4 - NC 5 - Vdd 6 - RF input Main Characteristics Tamb = +25°C, package form Symbol NF G ∆G Parameter Noise figure, 7-8GHz Noise figure, 8-13GHz Gain Gain flatness 16 Min Typ 2.5 2.0 19 ± 2.0 Max 3.
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