CHA2066-99F - Low Noise Amplifier
The CHA2066-99F is a two-stage wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.
It is supplied in chip form.
G1 7272 NC G2 Vd RFout UMS Mai
CHA2066-99F Features
* A B C D E NC
* Broad band performance 10-16GHz
* 2.0dB noise figure, 10-16GHz
* 16dB gain, 0.5dB gain flatness
* Low DC power consumption, 50mA
* 20dBm 3rd order intercept point
* Chip size: 1,52 x 1,08 x 0.1mm On wafer typical measurements. Main Characteristics Tamb =
