CHA2066-99F Datasheet - United Monolithic Semiconductors

CHA2066-99F Low Noise Amplifier

The CHA2066-99F is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography. It is supplied in chip form. G1 7272 NC G2 Vd RFout UMS Mai.

CHA2066-99F Features

* A B C D E NC

* Broad band performance 10-16GHz

* 2.0dB noise figure, 10-16GHz

* 16dB gain,  0.5dB gain flatness

* Low DC power consumption, 50mA

* 20dBm 3rd order intercept point

* Chip size: 1,52 x 1,08 x 0.1mm On wafer typical measurements. Main Characteristics Tamb =

CHA2066-99F-UnitedMonolithicSemiconductors.pdf

CHA2066-99F Datasheet Preview — Preview of CHA2066-99F PDF

Datasheet Details

Part number:

CHA2066-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

410.62 KB

Description:

Low noise amplifier.

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CHA2066-99F CHA2066-99F Low Noise Amplifier United Monolithic Semiconductors

CHA2066-99F Distributor