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CHA6362-QXG 17.7 - 19.7GHz Power Amplifier

CHA6362-QXG Description

CHA6362-QXG 17.7 - 19.7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package .
The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.

CHA6362-QXG Features

* Frequency range: 17.7- 19.7GHz
* 34.5dBm saturated power
* 42dBm OIP3
* 22dB gain
* DC bias: Vd = 6.0Volt @ Id = 1.34A
* QFN5x6
* MSL3 Power (dBm) & PAE (%) Power & PAE 36 34 32 30 Psat P1dB PAE sat 28 26 24 22 20 17 17.5 18 18.5 19 19.5 20 20.5 21 Fr

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17.7 19.7GHz Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA6362-QXG-like datasheet