Datasheet4U Logo Datasheet4U.com

CHA6664-QDG 12-16GHz 1W High Power Amplifier

CHA6664-QDG Description

CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package .
The CHA6664-QDG is a three-stages Ku-band high power amplifier.

CHA6664-QDG Features

* 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB)
* 0.25 µm Power pHEMT Technology
* 12-16 GHz Frequency Range
* 31.5 dBm Saturated Output Power
* High gain: 28dB
* Quiescent Bias Point: 8V, 600mA
* 24L-QFN4x4 SMD package 30 25 20 15 10 5 0 -5 -10 -15

📥 Download Datasheet

Preview of CHA6664-QDG PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • CHA611 - low noise high accuracy linear Hall effect-based sensor (Cosemitech)
  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

📌 All Tags

12-16GHz High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA6664-QDG-like datasheet