CHA6653-QXG Datasheet - United Monolithic Semiconductors

CHA6653-QXG Power Amplifier

The CHA6653-QXG is a four stage monolithic GaAs high power circuit producing 1.8 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio. The circuit is manufactured with a pHEMT process.

CHA6653-QXG Features

* Broadband performances: 27- 33.5GHz

* 32.5dBm saturated power

* 38dBm OIP3

* 20dB gain

* DC bias: Vd = 6.0Volt @ Id = 0.9A

* QFN 6x5

* MSL3 Output power (dBm) & PAE (%) Output power vs frequency 35 33 31 P1dB P4dB PAE @sat 29 27 25 23 21 19 17 15 26 27

CHA6653-QXG-UnitedMonolithicSemiconductors.pdf

CHA6653-QXG Datasheet Preview — Preview of CHA6653-QXG PDF

Datasheet Details

Part number:

CHA6653-QXG

Manufacturer:

United Monolithic Semiconductors

File Size:

530.24 KB

Description:

Power amplifier.

CHA6653-QXG Distributor

📁 Related Datasheet

CHA6653-98F Power Amplifier (United Monolithic Semiconductors)

CHA6652-98F Power Amplifier (United Monolithic Semiconductors)

CHA6652-QXG 21 - 27.5GHz Power Amplifier (United Monolithic Semiconductors)

CHA6664-QDG 12-16GHz 1W High Power Amplifier (United Monolithic Semiconductors)

CHA6005-99F High Power Amplifier (United Monolithic Semiconductors)

CHA6005-QEG High Power Amplifier (United Monolithic Semiconductors)

CHA6015-99F 2-8GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6042 13-16GHz High Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA6653-QXG CHA6653-QXG Power Amplifier United Monolithic Semiconductors