CHA6710-99F Datasheet - United Monolithic Semiconductors

CHA6710-99F 5W X Band Medium Power Amplifier

V+ The CHA6710-99F is a two stage Medium Power Amplifier operating between 8 and 12.75GHz. It typically provides 5W of saturated output power and 36% of power added efficiency. In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication sys.

CHA6710-99F Features

* Frequency range: 8-12.75GHz

* High output power: 5.5W

* High PAE: 36%

* Linear Gain: 23.5dB

* DC bias: Vd=25Volt @ Idq=0.2A

* Chip size 2.7x2.15x0.1mm

* Available in bare die Main Electrical Characteristics Tamb.= +25°C, Vd = +25V, Idq = 200mA, Pulse width=25µs, Duty

CHA6710-99F-UnitedMonolithicSemiconductors.pdf

CHA6710-99F Datasheet Preview — Preview of CHA6710-99F PDF

Datasheet Details

Part number:

CHA6710-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.71 MB

Description:

5w x band medium power amplifier.

📁 Related Datasheet

CHA6005-99F High Power Amplifier (United Monolithic Semiconductors)

CHA6005-QEG High Power Amplifier (United Monolithic Semiconductors)

CHA6015-99F 2-8GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6042 13-16GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6105 8-12GHz Driver Amplifier (United Monolithic Semiconductors)

CHA6105-99F Driver Amplifier (United Monolithic Semiconductors)

CHA611 low noise high accuracy linear Hall effect-based sensor (Cosemitech)

CHA6194-QXG 37-40GHz Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA6710-99F CHA6710-99F Band Medium Power Amplifier United Monolithic Semiconductors

CHA6710-99F Distributor