Part number:
CHZ015AaQEG
Manufacturer:
United Monolithic Semiconductors
File Size:
971.26 KB
Description:
15w l-band driver.
CHZ015AaQEG-UnitedMonolithicSemiconductors.pdf
Datasheet Details
Part number:
CHZ015AaQEG
Manufacturer:
United Monolithic Semiconductors
File Size:
971.26 KB
Description:
15w l-band driver.
CHZ015AaQEG, 15W L-Band Driver
The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in L-band.
The circuit is well suited for pulsed radar application.
The CHZ015AaQEG is proposed on a 0.5µm gate length GaN HEMT process
CHZ015AaQEG Features
* Wide band capability: 1.2 - 1.4GHz
* Pulsed operating mode
* High power: > 15W
* High PAE: up to 60%
* DC bias: VDS=45V @ I D_Q=100mA
* Low cost package: 24L-QFN4x5
* MTTF > 106 hours @ Tj=200°C Pout (dBm) & PAE (%) @ 28dBm Gain(dB) @10dBm VDS = 45V, ID_Q = 100mA, Pin
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