CHZ015AaQEG Datasheet - United Monolithic Semiconductors

15W L-Band Driver

CHZ015AaQEG Features

* Wide band capability: 1.2 - 1.4GHz

* Pulsed operating mode

* High power: > 15W

* High PAE: up to 60%

* DC bias: VDS=45V @ I D_Q=100mA

* Low cost package: 24L-QFN4x5

* MTTF > 106 hours @ Tj=200°C Pout (dBm) & PAE (%) @ 28dBm Gain(dB) @10dBm VDS = 45V, ID_Q = 100mA, Pin

CHZ015AaQEG General Description

The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015AaQEG is proposed on a 0.5µm gate length GaN HEMT process.

CHZ015AaQEG Datasheet (971.26 KB)

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Datasheet Details

Part number:

CHZ015AaQEG

Manufacturer:

United Monolithic Semiconductors

File Size:

971.26 KB

Description:

15w l-band driver.

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CHZ015AaQEG 15W L-Band Driver United Monolithic Semiconductors

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CHZ015AaQEG Features

CHZ015AaQEG General Description

Datasheet Details

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