CHZ015AaQEG Datasheet (United Monolithic Semiconductors)

CHZ015AaQEG, 15W L-Band Driver

The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band.

The circuit is well suited for pulsed radar application.

The CHZ015AaQEG is proposed on a 0.5µm gate length GaN HEMT process

CHZ015AaQEG Features

* Wide band capability: 1.2 - 1.4GHz

* Pulsed operating mode

* High power: > 15W

* High PAE: up to 60%

* DC bias: VDS=45V @ I D_Q=100mA

* Low cost package: 24L-QFN4x5

* MTTF > 106 hours @ Tj=200°C Pout (dBm) & PAE (%) @ 28dBm Gain(dB) @10dBm VDS = 45V, ID_Q = 100mA, Pin