CHZ015A-QEG Datasheet - United Monolithic Semiconductors

CHZ015A-QEG 15W L-Band Driver

The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5µm gate length GaN HEMT process.

CHZ015A-QEG Features

* Wide band capability: 1.2 - 1.4GHz

* Pulsed operating mode

* High power: > 15W

* High PAE: up to 55%

* DC bias: VDS=45V @ I D_Q=100mA

* Low cost package: 24L-QFN4x5

* MTTF > 106 hours @ Tj=200°C VDS = 45V, ID_Q = 100mA, Pin = 28dBm Pulsed mode (25µs-10%) Performances

CHZ015A-QEG-UnitedMonolithicSemiconductors.pdf

CHZ015A-QEG Datasheet Preview — Preview of CHZ015A-QEG PDF

Datasheet Details

Part number:

CHZ015A-QEG

Manufacturer:

United Monolithic Semiconductors

File Size:

969.67 KB

Description:

15w l-band driver.

CHZ015A-QEG Distributor

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CHZ015A-QEG CHZ015A-QEG 15W L-Band Driver United Monolithic Semiconductors