CHZ180A-SEB Datasheet - United Monolithic Semiconductors

CHZ180A-SEB 180W L-Band HPA

The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5µm gate length Ga.

CHZ180A-SEB Features

* Wide band capability: 1.2

* 1.4GHz

* Pulsed operating mode

* High power: > 180W

* High PAE: up to 53%

* DC bias: VDS = 45V @ ID_Q = 1.3A

* MTTF > 106 hours @ Tj = 200°C

* RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) Power Gain (dB) VDS = 45V, ID_Q

CHZ180A-SEB-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHZ180A-SEB

Manufacturer:

United Monolithic Semiconductors

File Size:

642.15 KB

Description:

180w l-band hpa.

CHZ180A-SEB Distributor

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CHZ180A-SEB CHZ180A-SEB 180W L-Band HPA United Monolithic Semiconductors