Part number:
CHZ180A-SEB
Manufacturer:
United Monolithic Semiconductors
File Size:
642.15 KB
Description:
180w l-band hpa.
CHZ180A-SEB-UnitedMonolithicSemiconductors.pdf
Datasheet Details
Part number:
CHZ180A-SEB
Manufacturer:
United Monolithic Semiconductors
File Size:
642.15 KB
Description:
180w l-band hpa.
CHZ180A-SEB, 180W L-Band HPA
The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in L-band.
It is well suited for pulsed radar application.
The CHZ180A-SEB is proposed on a 0.5µm gate length Ga
CHZ180A-SEB Features
* Wide band capability: 1.2
* 1.4GHz
* Pulsed operating mode
* High power: > 180W
* High PAE: up to 53%
* DC bias: VDS = 45V @ ID_Q = 1.3A
* MTTF > 106 hours @ Tj = 200°C
* RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) Power Gain (dB) VDS = 45V, ID_Q
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