CHZ050A-SEA GaN HEMT

United Monolithic Semiconductors

Description

CHZ050A-SEA 50W C Band HPA GaN HEMT on SiC .
The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor.

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Datasheet Specifications

Part number: CHZ050A-SEA
Manufacturer: United Monolithic Semiconductors
File Size: 598.26 KB
Datasheet: CHZ050A-SEA-UnitedMonolithicSemiconductors.pdf
Description: GaN HEMT

Features

* Bandwidth : 5.2-5.8 GHz
* Pulsed operating mode
* High power: > 50W
* High Efficiency: up to 45%
* DC bias: VDS =50V @ ID_Q =400mA
* MTTF > 106 hours @ Tj=200°C
* 50 input and output matched
* External input/output bias tees required
* RoHS Flange Ceramic packa

Applications

* in C-band. It is proposed in a low parasitic, low thermal resistance package, and doesn’t require any external matching circuitry. The CHZ050A-SEA is well suited for pulsed radar and satcom applications. It is developed on a 0.5µm gate length GaN HEMT process, and is available as a hermetic flange c

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CHZ050A-SEA GaN HEMT United Monolithic Semiconductors

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