CHZ050A-SEA - GaN HEMT

United Monolithic Semiconductors

Datasheet Details

Part number	CHZ050A-SEA
Manufacturer	United Monolithic Semiconductors
File Size	598.26 KB
Description	GaN HEMT
Datasheet	CHZ050A-SEA-UnitedMonolithicSemiconductors.pdf

The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor.

Bandwidth : 5.2-5.8 GHz.
Pulsed operating mode.
High power: > 50W.
High Efficiency: up to 45%.
DC bias: VDS =50V @ ID_Q =400mA.
MTTF > 106 hours @ Tj=200°C.
50 input and output matched.
External input/output bias tees required.
RoHS Flange Ceramic package VDS = 50V, ID_Q = 400mA Pulse mode (25µs-10%) Pin = 35dBm PAE Gain Pout Intrinsic performances of the packaged device Main Electrical Characteristics Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GH.

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Published: Feb 26, 2016 |