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CHZ050A-SEA

GaN HEMT

CHZ050A-SEA Features

* Bandwidth : 5.2-5.8 GHz

* Pulsed operating mode

* High power: > 50W

* High Efficiency: up to 45%

* DC bias: VDS =50V @ ID_Q =400mA

* MTTF > 106 hours @ Tj=200°C

* 50 input and output matched

* External input/output bias tees required

* RoHS Flange Ceramic packa

CHZ050A-SEA General Description

The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in C-band. It is proposed in a low parasitic, low thermal resistance package, and doesn’t require any external ma.

CHZ050A-SEA Datasheet (598.26 KB)

Preview of CHZ050A-SEA PDF

Datasheet Details

Part number:

CHZ050A-SEA

Manufacturer:

United Monolithic Semiconductors

File Size:

598.26 KB

Description:

Gan hemt.

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TAGS

CHZ050A-SEA GaN HEMT United Monolithic Semiconductors

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