CHZ8012-QJA Datasheet, Amplifier, United Monolithic Semiconductors

CHZ8012-QJA Features

• Amplifier
• Frequency Range: 2.6-3.4GHz
• Pulsed operating mode
• High power: > 12W
• High Efficiency: > 52%
• DC bias: Vd up to 30Volt
• Low cost

PDF File Details

Part number:

CHZ8012-QJA

Manufacturer:

United Monolithic Semiconductors

File Size:

664.50kb

Download:

📄 Datasheet

Description:

S-band 12w gan high power amplifier. The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fab

CHZ8012-QJA Application

• Applications from military to commercial radar systems. The part is proposed in low cost plastic package providing low parasitic and low thermal re

TAGS

CHZ8012-QJA

United Monolithic Semiconductors

📁 Related Datasheet

CHZ015A-QEG - 15W L-Band Driver (United Monolithic Semiconductors)
CHZ015A-QEG 15W L-Band Driver GaN HEMT on Sic in SMD leadless package Description The CHZ015A-QEG is an input matched packaged Gallium Nitride High E.

CHZ015AaQEG - 15W L-Band Driver (United Monolithic Semiconductors)
CHZ015AaQEG 15W L-Band Driver GaN HEMT on Sic in SMD leadless package Description The CHZ015AaQEG is an input matched packaged Gallium Nitride High.

CHZ050A-SEA - GaN HEMT (United Monolithic Semiconductors)
CHZ050A-SEA 50W C Band HPA GaN HEMT on SiC Description The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electr.

CHZ180A-SEB - 180W L-Band HPA (United Monolithic Semiconductors)
CHZ180A-SEB 180W L-Band HPA GaN HEMT on SiC in SEB Package Description The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Ni.

CHZ180AaSEB - 180W L-Band HPA (United Monolithic Semiconductors)
CHZ180AaSEB 180W L-Band HPA GaN HEMT on SEB Package Description The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride .

CHZ9012-QFA - S-Band 60W GaN High Power Amplifier (United Monolithic Semiconductors)
CHZ9012-QFA S-Band 60W GaN High Power Amplifier GaN HEMT on SiC and GaAs Monolithic Microwave Matching Circuits in SMD leadless package Description .

CH-101 - ultra-low-power ultrasonic Time-ofFlight (ToF) range sensor (TDK)
CH-101 Datasheet DS-000331 CH-101 Datasheet Chirp Microsystems reserves the right to change specifications and information herein without notice. .

CH-130-4 - 30 dB Bi-directional Coupler (Tyco Electronics)
30 dB Bi-directional Coupler, 500 Watt 2 - 32 MHz Features q q q CH-130-4 V2.00 C-12 High Power Handling Capability – 500 Watts Very Low Insertion .

CH-132 - Bi Directional Coupler (MA-COM)
CH-132 20 dB, Bi Directional Coupler 1-1000MHz Features  Broad Frequency Range  Constant Coupling—Within ± 0.5 dB Max  VSWR: 1.3:1 Max  Descriptio.

CH-134 - Bi-Directional Couplers (MA-COM)
CH- / CHS-134 Bi-Directional Couplers, 10 - 500 MHz Features  Constant Coupling - within ±0.5 dB max.  MIL-STD-202 Screening Available Description B.