CHZ8012-QJA - S-Band 12W GaN High Power Amplifier

United Monolithic Semiconductors

Datasheet Details

Part number	CHZ8012-QJA
Manufacturer	United Monolithic Semiconductors
File Size	664.50 KB
Description	S-Band 12W GaN High Power Amplifier
Datasheet	CHZ8012-QJA-UnitedMonolithicSemiconductors.pdf

The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits.

Frequency Range: 2.6-3.4GHz.
Pulsed operating mode.
High power: > 12W.
High Efficiency: > 52%.
DC bias: Vd up to 30Volt.
Low cost package: 28L-DFN 7x7mm² Main Electrical Characteristics Gain (dB), Pout (dBm) & PAE (%) 28 leads DFN package-7x7 mm² VDS = 26V, ID_Q = 180mA, Freq = 3GHz Pulsed mode (400µs, 15%), 25°C 60 55 PAE 50 45 Pout 40 35 30 25 20 Gain 15 10 5 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Input Power (dBm) Perf.

📁 CHZ8012-QJA Similar Datasheet

Other Datasheets by United Monolithic Semiconductors

Published: Jan 27, 2025 |