CHZ8012-QJA Datasheet - United Monolithic Semiconductors

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CHZ8012-QJA S-Band 12W GaN High Power Amplifier

CHZ8012-QJA S-Band 12W GaN High Power Amplifier GaN HEMT on SiC and GaAs Monolithic Microwave Matching Circuits in SMD leadless package .
The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits.

CHZ8012-QJA-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHZ8012-QJA

Manufacturer:

United Monolithic Semiconductors

File Size:

664.50 KB

Description:

S-Band 12W GaN High Power Amplifier

Features

* Frequency Range: 2.6-3.4GHz
* Pulsed operating mode
* High power: > 12W
* High Efficiency: > 52%
* DC bias: Vd up to 30Volt
* Low cost package: 28L-DFN 7x7mm² Main Electrical Characteristics Gain (dB), Pout (dBm) & PAE (%) 28 leads DFN package-7x7 mm² VDS = 26V, ID_Q = 1

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CHZ8012-QJA S-Band 12W GaN High Power Amplifier United Monolithic Semiconductors

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