CHZ8012-QJA Datasheet - United Monolithic Semiconductors

CHZ8012-QJA S-Band 12W GaN High Power Amplifier

The CHZ8012-QJA is an S-Band QuasiMMIC Power Amplifier based on GaN power bar and GaAs input and output matching circuits. It is fabricated using UMS 0.25µm GaN on SiC and GaAs MMIC High Power UMS Passive technologies. The CHZ8012-QJA is fully matched on 50 Ohms. It can be used following several op.

CHZ8012-QJA Features

* Frequency Range: 2.6-3.4GHz

* Pulsed operating mode

* High power: > 12W

* High Efficiency: > 52%

* DC bias: Vd up to 30Volt

* Low cost package: 28L-DFN 7x7mm² Main Electrical Characteristics Gain (dB), Pout (dBm) & PAE (%) 28 leads DFN package-7x7 mm² VDS = 26V, ID_Q = 1

CHZ8012-QJA-UnitedMonolithicSemiconductors.pdf