CHZ180AaSEB Datasheet (United Monolithic Semiconductors)

CHZ180AaSEB, 180W L-Band HPA

The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in L-band.

It is well suited for pulsed radar application.

The CHZ180AaSEB is proposed on a 0.5µm gate length Ga

CHZ180AaSEB Features

* Wide band capability: up to 1.5GHz

* Pulsed operating mode

* High power: > 180W

* High Efficiency

* DC bias: VDS = 45V @ ID_Q = 1.3A

* Package: Hermetic Ceramic-Metal

* MTTF > 106 hours @ Tj = 200°C

* RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) VDS = 4