CHZ180AaSEB Datasheet - United Monolithic Semiconductors

CHZ180AaSEB 180W L-Band HPA

The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180AaSEB is proposed on a 0.5µm gate length Ga.

CHZ180AaSEB Features

* Wide band capability: up to 1.5GHz

* Pulsed operating mode

* High power: > 180W

* High Efficiency

* DC bias: VDS = 45V @ ID_Q = 1.3A

* Package: Hermetic Ceramic-Metal

* MTTF > 106 hours @ Tj = 200°C

* RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) VDS = 4

CHZ180AaSEB-UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHZ180AaSEB

Manufacturer:

United Monolithic Semiconductors

File Size:

623.76 KB

Description:

180w l-band hpa.

CHZ180AaSEB Distributor

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CHZ180AaSEB CHZ180AaSEB 180W L-Band HPA United Monolithic Semiconductors