CHZ180AaSEB 180W L-Band HPA

United Monolithic Semiconductors

Description

CHZ180AaSEB 180W L-Band HPA GaN HEMT on SEB Package .
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.

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Datasheet Specifications

Part number: CHZ180AaSEB
Manufacturer: United Monolithic Semiconductors
File Size: 623.76 KB
Datasheet: CHZ180AaSEB-UnitedMonolithicSemiconductors.pdf
Description: 180W L-Band HPA

Features

* Wide band capability: up to 1.5GHz
* Pulsed operating mode
* High power: > 180W
* High Efficiency
* DC bias: VDS = 45V @ ID_Q = 1.3A
* Package: Hermetic Ceramic-Metal
* MTTF > 106 hours @ Tj = 200°C
* RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) VDS = 4

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CHZ180AaSEB 180W L-Band HPA United Monolithic Semiconductors

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