Part number:
CHZ180AaSEB
Manufacturer:
United Monolithic Semiconductors
File Size:
623.76 KB
Description:
180w l-band hpa.
CHZ180AaSEB-UnitedMonolithicSemiconductors.pdf
Datasheet Details
Part number:
CHZ180AaSEB
Manufacturer:
United Monolithic Semiconductors
File Size:
623.76 KB
Description:
180w l-band hpa.
CHZ180AaSEB, 180W L-Band HPA
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in L-band.
It is well suited for pulsed radar application.
The CHZ180AaSEB is proposed on a 0.5µm gate length Ga
CHZ180AaSEB Features
* Wide band capability: up to 1.5GHz
* Pulsed operating mode
* High power: > 180W
* High Efficiency
* DC bias: VDS = 45V @ ID_Q = 1.3A
* Package: Hermetic Ceramic-Metal
* MTTF > 106 hours @ Tj = 200°C
* RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) VDS = 4
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