CHZ180AaSEB Datasheet, Hpa, United Monolithic Semiconductors

✔ CHZ180AaSEB Features

Wide band capability: up to 1.5GHz
Pulsed operating mode
High power: > 180W
High Efficiency
DC bias: VDS = 45V @ ID_Q = 1.3A
Package: Hermetic Ceramic-Metal

✔ CHZ180AaSEB Application

in L-band. It is well suited for pulsed radar application. The CHZ180AaSEB is proposed on a 0.5µm gate lengt

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CHZ180AaSEB

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📄 Datasheet

Description:

180w l-band hpa. The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broa

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Stock and price

United Monolithic Semiconductors

RF POWER TRANSISTOR

Richardson RFPD

CHZ180AASEB

0 In Stock

Qty : 25 units

Unit Price : $742.05

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CHZ180AaSEB 180W L-Band HPA United Monolithic Semiconductors