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CHA5295 - 24.5-26.5GHz High Power Amplifier

CHA5295 Description

CHA5295 24.5-26.5GHz High Power Amplifier GaAs Monolithic Microwave IC .
The CHA5295 is a high gain three-stage monolithic high power amplifier.

CHA5295 Features

* Performances : 24.5-26.5GHz
* 30dBm output power @ 1dB comp.
* 17 dB ± 1dB gain
* DC power consumption, 800mA @ 6V
* Chip size : 4.01 x 2.52 x 0.05 mm 32 30 28 26 24 22 20 18 16 14 12 10 24 P-1dB (dBm) Linear Gain (dB) PAE (%) 24,5 25 25,5 26 Frequency (GHz) Typical on jig

CHA5295 Applications

* from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. I

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24.5-26.5GHz High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA5295-like datasheet