MIE-324A2 Datasheet (Unity Opto Technology) - AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

MIE-324A2, AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE

The MIE-324A2 is a high power infrared eimtting diode in GaAs technology with AlGaAs window coating molded in water clear plastic package.

φ 3.55±0.25 (.140±.010) φ 3.10±0.20 (.122±.008) MIE-324A2 Unit : mm (inches ) Package Dimensions 4.28±0.20 (.169±.008) 5.28±0.30 (.208±.012) SEE NOTE 2 3.85

MIE-324A2 Features

* l l l l 23.40MIN. (.920) CATHODE l High radiant power and high radiant intensity Suitable ror DC and high pulse current operation Standard T-1 ( φ 3mm) package, radiation angle: 40° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector A 0.50 TYP. (.020) 1.00MIN. (.039) 2.54NOM.