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P9006EDG Datasheet - VBsemi

P9006EDG P-Channel MOSFET

P9006EDG Features

* TrenchFET® Power MOSFET

* 100 % UIS Tested APPLICATIONS

* Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ

P9006EDG Datasheet (280.26 KB)

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Datasheet Details

Part number:

P9006EDG

Manufacturer:

VBsemi

File Size:

280.26 KB

Description:

P-channel mosfet.

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P9006EDG P-Channel MOSFET VBsemi

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