P9006EDG P-Channel MOSFET

VBsemi

P9006EDG Description

P9006EDG www.VBsemi.com P9006EDG P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.

P9006EDG Features

* TrenchFET® Power MOSFET

P9006EDG Applications

* Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 25 Pulsed Drain Current I

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Datasheet Details

Part number: P9006EDG
Manufacturer: VBsemi
File Size: 280.26 KB
Datasheet: P9006EDG-VBsemi.pdf
Description: P-Channel MOSFET

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P-Channel MOSFET VBsemi

VBsemi P9006EDG-like datasheet