* TrenchFET® Power MOSFET
* 100 % UIS Tested APPLICATIONS
* Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ
P9006EDG Datasheet (280.26 KB)
P9006EDG
VBsemi
280.26 KB
P-channel mosfet.
P9006EDG
www.VBsemi.com
P9006EDG P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.061 at V GS = - 10 V
0.072 at VGS = - 4.
📁 Related Datasheet
P9006EDA - P-Channel Enhancement Mode Field Effect Transistor
(NIKO-SEM)
NIKO-SEM
P-Channel Enhancement Mode
P9006EDA
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
9.
P9006EDG - P-Channel MOSFET
(UNIKC)
P9006EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA .
P9006EDG - P-Channel Logic Level Enhancement
(Niko-Sem)
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -60V RDS.
P9006EI - P-Channel MOSFET
(UNIKC)
P9006EI
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA =.
P9006EL - MOSFET
(UNIKC)
P9006EL
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID -4A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA =.
P9006ESG - P-Channel MOSFET
(UNIKC)
P9006ESG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID -18A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA =.
P9006ETF - P-Channel MOSFET
(UNIKC)
P9006ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60
90mΩ @VGS = 10V
ID -15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA =.
P9006EVA - P-Channel Enhancement Mode Field Effect Transistor
(NIKO-SEM)
NIKO-SEM
P-Channel Logic Level Enhancement Mode P9006EVA
Field Effect Transistor
SOP-8
Halogen-free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON.
