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P9006ESG Datasheet - UNIKC

P9006ESG-UNIKC.pdf

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Datasheet Details

Part number:

P9006ESG

Manufacturer:

UNIKC

File Size:

433.49 KB

Description:

P-channel mosfet.

P9006ESG, P-Channel MOSFET

P9006ESG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = 10V ID -18A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -18 -12 -48 Avalanche Current IAS -22 Avalanche Energy L = 0.1mH EAS 24 Power Dissipation TC = 25 °C TC = 100 °C PD 54 22

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