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P9006ETF - P-Channel MOSFET

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Part number P9006ETF
Manufacturer UNIKC
File Size 341.73 KB
Description P-Channel MOSFET
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P9006ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60 90mΩ @VGS = 10V ID -15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID -15 -9.5 IDM -60 Avalanche Current IAS -24 Avalanche Energy L = 0.1mH EAS 28 Power Dissipation TC = 25 °C PD 35 TC = 100 °C 14 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.
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