P9006ETF Datasheet - UNIKC

P9006ETF P-Channel MOSFET

P9006ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60 90mΩ @VGS = 10V ID -15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID -15 -9.5 IDM -60 Avalanche Current IAS -24 Avalanche Energy L = 0.1mH EAS 28 Power Dissipation TC = 25 °C PD 35 TC = 100.

P9006ETF Datasheet (341.73 KB)