P9006EI Datasheet - UNIKC

P9006EI P-Channel MOSFET

P9006EI P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 90mΩ @VGS = -10V ID -18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM -18 -11 -50 Avalanche Current IAS -24 Avalanche Energy L = 0.1mH EAS 30 Power Dissipation TC = 25 °C TC = 100 °C PD 51 20 Operating Junction & Storage T.

P9006EI Datasheet (337.78 KB)